%PDF-1.4
%
1 0 obj
<>stream
iText 4.2.0 by 1T3XT
2020-12-06T20:55:59-08:00
2020-11-05T12:10:02+05:30
2020-12-06T20:55:59-08:00
Arbortext Advanced Print Publisher 9.0.114/W
uuid:f7e77848-4b08-2d1b-7b6c-69946afe9460
10.1063/5.0021395
α-In2Se3 based ferroelectric-semiconductor metal junction for non-volatile memories
true
2020-11-05
aip.org
10.1063/5.0021395
https://doi.org/10.1063/5.0021395
© 2020 Author(s)
VoR
doi:10.1063/5.0021395
Applied Physics Letters
application/pdf
AIP Publishing LLC
α-In2Se3 based ferroelectric-semiconductor metal junction for non-volatile memories
Atanu K. Saha
Mengwei Si
Peide D. Ye
Sumeet K. Gupta
Appl. Phys. Lett..2020.117:183504
2020-11-05
true
10.1063/5.0021395
aip.org
endstream
endobj
2 0 obj
<>
endobj
3 0 obj
<>stream
xX͎6S~"Lނ-ȩEsH/}2e˲mf+SIGLl69WM29y2 )$rzG}U]0L.AlU&h-Nhr$ՈF;};?ܽaHd(Eizx>`ו_azq!ĉeӁ+6k'3Fvg[Ɖ04^*8Ny
|b]@w\^I&$$O)__hɺЄa#n%;"P3 H